| MRC |
Requirement Statement |
Characteristics |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 200.0 DEG CELSIUS |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAT |
BODY WIDTH |
0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
8 INPUT |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND MEDIUM SPEED |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| PRMT |
III PRECIOUS MATERIAL |
GOLD |
| PMLC |
III PRECIOUS MATERIAL AND LOCATION |
TERMINAL SURFACE GOLD |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| ADAQ |
BODY LENGTH |
0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM |
| CZEQ |
TIME RATING PER CHACTERISTIC |
20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
1 GATE, NAND |
| ADAU |
BODY HEIGHT |
0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
30.0 MILLIWATTS |
