| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| TEST |
TEST DATA DOCUMENT |
97942-578F628 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CQZP |
INPUT CIRCUIT PATTERN |
TRIPLE 3 INPUT |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
3 GATE, NAND |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.5 VOLTS MAXIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZEQ |
TIME RATING PER CHACTERISTIC |
15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAT |
BODY WIDTH |
0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
495.0 MILLIWATTS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| ADAQ |
BODY LENGTH |
0.785 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.180 INCHES MAXIMUM |
| TTQY |
TERMINAL TYPE AND QUANTITY |
14 PRINTED CIRCUIT |
