| MRC |
Requirement Statement |
Characteristics |
| CZEQ |
TIME RATING PER CHACTERISTIC |
5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 89.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMED AND SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 FLAT LEADS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAU |
BODY HEIGHT |
0.085 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.440 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| TEST |
TEST DATA DOCUMENT |
82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
