| MRC |
Requirement Statement |
Characteristics |
| ADAQ |
BODY LENGTH |
1.200 INCHES MINIMUM AND 1.290 INCHES MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEQ |
TIME RATING PER CHACTERISTIC |
650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
128 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| TTQY |
TERMINAL TYPE AND QUANTITY |
24 PRINTED CIRCUIT |
| ADAU |
BODY HEIGHT |
0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| TEST |
TEST DATA DOCUMENT |
05869-717382-5 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-8.0 VOLTS MINIMUM POWER SOURCE AND 12.3 VOLTS MAXIMUM POWER SOURCE |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
625.0 MILLIWATTS |
| ADAT |
BODY WIDTH |
0.515 INCHES MINIMUM AND 0.525 INCHES MAXIMUM |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
| CQZP |
INPUT CIRCUIT PATTERN |
11 INPUT |
