| MRC |
Requirement Statement |
Characteristics |
| ADAT |
BODY WIDTH |
0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 PRINTED CIRCUIT |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
64 |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| AFGA |
OPERATING TEMP RANGE |
-65.0 TO 125.0 DEG CELSIUS |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
16 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
-1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| ADAQ |
BODY LENGTH |
0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
| ADAU |
BODY HEIGHT |
0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 160.0 DEG CELSIUS |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CBBL |
FEATURES PROVIDED |
MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR |
