MRC |
Requirement Statement |
Characteristics |
ABBH |
INCLOSURE MATERIAL |
METAL ALL TRANSISTOR |
ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL TRANSISTOR |
ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
ABKW |
OVERALL HEIGHT |
0.340 INCHES MAXIMUM 1ST TRANSISTOR 0.328 INCHES MAXIMUM 2ND TRANSISTOR |
CTRD |
POWER RATING PER CHARACTERISTIC |
35.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 1ST TRANSISTOR 250.0 WATTS MAXIMUM TOTAL POWER DISSIPATION 2ND TRANSISTOR |
CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS AMBIENT AIR 1ST TRANSISTOR 200.0 DEG CELSIUS JUNCTION 2ND TRANSISTOR |
CTQX |
CURRENT RATING PER CHARACTERISTIC |
1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC 1ST TRANSISTOR 20.00 AMPERES MAXIMUM BASE CURRENT, DC AND 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC 2ND TRANSISTOR |
ABHP |
OVERALL LENGTH |
1.252 INCHES MAXIMUM 1ST TRANSISTOR 1.573 INCHES MAXIMUM 2ND TRANSISTOR |
TTQY |
TERMINAL TYPE AND QUANTITY |
2 PIN AND 1 CASE ALL TRANSISTOR |
AGAV |
III END ITEM IDENTIFICATION |
F-16 A/B AIRCRAFT |
ALBA |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE |
COLLECTOR ALL TRANSISTOR |
ASCQ |
INTERNAL JUNCTION CONFIGURATION |
PNP 1ST TRANSISTOR NPN 2ND TRANSISTOR |
ASKA |
COMPONENT NAME AND QUANTITY |
2 TRANSISTOR |
AXGY |
MOUNTING METHOD |
UNTHREADED HOLE ALL TRANSISTOR |
CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL TRANSISTOR |
ABMK |
OVERALL WIDTH |
0.700 INCHES MAXIMUM 1ST TRANSISTOR 1.050 INCHES MAXIMUM 2ND TRANSISTOR |
CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
275.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 225.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 1ST TRANSISTOR 180.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 150.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN 2ND TRANSISTOR |
AKPV |
MOUNTING FACILITY QUANTITY |
2 ALL TRANSISTOR |