| MRC |
Requirement Statement |
Characteristics |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
40.0 MILLIWATTS |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| CSSL |
DESIGN FUNCTION AND QUANTITY |
4 GATE, NAND |
| ADAT |
BODY WIDTH |
0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| CQZP |
INPUT CIRCUIT PATTERN |
QUAD 2 INPUT |
| ADAQ |
BODY LENGTH |
0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| PRMT |
III PRECIOUS MATERIAL |
GOLD |
| CZEQ |
TIME RATING PER CHACTERISTIC |
22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND BIPOLAR |
| ADAU |
BODY HEIGHT |
0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| PMLC |
III PRECIOUS MATERIAL AND LOCATION |
TERMINALS GOLD AND BODY GOLD |
| CQSJ |
INCLOSURE MATERIAL |
GLASS AND METAL |
| CTFT |
CASE OUTLINE SOURCE AND DESIGNATOR |
T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
