| MRC |
Requirement Statement |
Characteristics |
| ASCQ |
INTERNAL JUNCTION CONFIGURATION |
NPN 1ST TRANSISTOR PNP 2ND TRANSISTOR |
| ABHP |
OVERALL LENGTH |
0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR |
| ABBH |
INCLOSURE MATERIAL |
METAL ALL TRANSISTOR |
| CTSG |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT |
200.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| ALAS |
INTERNAL CONFIGURATION |
JUNCTION CONTACT ALL TRANSISTOR |
| ASDD |
COMPONENT FUNCTION RELATIONSHIP |
MATCHED |
| CTQN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC |
30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC 1ST TRANSISTOR 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC 2ND TRANSISTOR 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC ALL TRANSISTOR |
| ADAV |
OVERALL DIAMETER |
0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALL TRANSISTOR |
| CTRD |
POWER RATING PER CHARACTERISTIC |
3.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION 1ST TRANSISTOR 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION 2ND TRANSISTOR |
| CTQX |
CURRENT RATING PER CHARACTERISTIC |
0.40 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR |
| TTQY |
TERMINAL TYPE AND QUANTITY |
3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| ALAZ |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION |
TO-39 ALL TRANSISTOR |
| ASKA |
COMPONENT NAME AND QUANTITY |
2 TRANSISTOR |
| AXGY |
MOUNTING METHOD |
TERMINAL ALL TRANSISTOR |
| CTMZ |
SEMICONDUCTOR MATERIAL |
SILICON ALL TRANSISTOR |
| ABJT |
TERMINAL LENGTH |
0.500 INCHES MINIMUM ALL TRANSISTOR |
